|Global IGBT Market 2014-2018|
July 22, 2014
NEW YORK, July 22, 2014 /PRNewswire/ Reportlinker.com announces that a new market research report is available in its catalogue:
|MTE Expands the Matrix' AP Product Family With High Current Harmonic Filters|
July 16, 2014
MENOMONEE FALLS, Wis., July 16, 2014 /PRNewswire/ MTE Corporation, a world leader in the design and manufacture of high-efficiency electrical power quality solutions for commercial and industrial app...
|IR Introduces M3G120 Series of 40W Radiation-Hardened 120V Input DC-DC Converters for Satellite Power Systems|
July 15, 2014
The M3G120 series was developed using a proven design methodology based
on the legacy of the M3G Series and extensive space design heritage. The
design included a selection of establishe...
|IR Expands Portfolio of 60V StrongIRFET MOSFETs Featuring Ultra-low Rds(on) in Standard and Performance Power Packages for Industrial Applications|
July 01, 2014
Available in through-hole and surface mount packages, the expanded 60V
StrongIRFET family includes the IRF7580M. Housed in a low profile,
ultra-compact Medium Can (ME) DirectFET package ...
|IR Introduces D Series of Low Power High Reliability Two Output DC-DC Converters for Satellite Power Systems|
June 26, 2014
The new D28xxD and D50xxxxP D Series of DC-DC converters offer extremely
low output noise, guaranteed End-of-Life (EOL) output voltage drift with
excellent output cross regulation. Each ...
|IR's Automotive-Qualified AUIRFN8403 in Compact PQFN 5X6 Delivers High Efficiency, High Power Density while Reducing Overall System Cost|
June 19, 2014
Available in a compact PQFN 5x6mm package, the AUIRFN8403, the first in
a family of new devices, utilizes IR's most advanced COOLiRFET 40V
trench technology, delivering ultra-low 3.3mOhm...
|MOSFET Market (High / Low Voltage & Super Junction) Growth Steady to 2018|
June 17, 2014
DALLAS, June 17, 2014 /PRNewswire/
|IR's Gen8 IGBT Platform Wins “Green Power and New Energy Resources Award” from EEPW|
June 03, 2014
The Gen8 IGBT platform utilizes IR's latest generation Trench Gate Field
Stop technology to offer benchmark performance for industrial and energy
saving applications. The novel design al...
|IR's µIPM-DIP Power Modules Offer Cost Effective Industry Standard Solution for Low Power Motor Drive Applications|
May 27, 2014
Available in a compact 12 x 29mm SOP/DIP package, IR's µIPM-DIP product
family offers a cost effective power solution by leveraging industry
standard footprints and processes compatible ...
|IR Expands Portfolio of Rugged Reliable 600V Energy-Efficient Trench IGBTs|
May 08, 2014
The extensive family of 23 IGBTs utilizes trench thin wafer Field Stop
technology to offer low and balanced conduction and switching losses.
Co-packaged with a soft recovery low Qrr diod...
|Global Super Junction MOSFET Market 2014-2018: Need for Miniaturizing Semiconductor Devices is Expected to Fuel the Demand for Super Junction MOSFETs|
April 29, 2014
DUBLIN, Ireland, April 29, 2014 /PRNewswire/
|International Rectifier Presents Latest Power Management Solutions at PCIM Europe 2014|
April 24, 2014
IR engineering and technical sales staff will demonstrate IR's latest
energy-saving and high power density enabling technologies and products
at the IR booth, Hall 9, Stand 413. The IR b...
|Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics Report|
April 22, 2014
DUBLIN, April 22, 2014 /PRNewswire/
|IR Expands StrongIRFET Family with New 60V MOSFETs Featuring Ultra-low Rds(on) for Industrial Applications|
April 17, 2014
The new family of 60V StrongIRFET power MOSFETs feature
ultra-low on-state resistance (Rds(on)) for improved performance in low
frequency applications, very high-current carrying capabil...
|IR Introduces Class D Audio Chipset Featuring the IRS20965 Driver IC with Protected PWM Switching for High Performance Audio Amplifiers|
April 03, 2014
The IRS20965 features high-side and low-side independent floating PWM
input to allow deadtime control from an external PWM controller.
Shoot-through prevention logic provides additional ...
|IR's New 20-30V StrongIRFET Family Delivers Ultra-low Rds(on) for High Performance Computing and Communications Applications|
March 27, 2014
The IRL6283M features Rds(on) of only 500 ?Ohm (typical) in a low
profile 30 mm2 DirectFET Medium Can package to
significantly reduce conduction losses. This makes it ideal for active
|IR's Robust 600V IR25750 SOT-23 Current Sensing IC Boosts Overall System Efficiency While Delivering Dramatic Space Savings|
March 20, 2014
Measuring high currents (10-100A) through a power MOSFET or IGBT
typically requires a large resistor which generates excess power losses
(10~30W). By extracting the voltage across the in...
|IR's Family of CHiL Digital PWM Controllers and Integrated PowIRstage Solutions Provide Optimized End-to-End Solutions with PMBusTM for Next-Generation Computing Platfor|
March 18, 2014
IR's new digital controllers meet Intel VR12 and VR12.5 specifications,
and support multiphase designs from 1 to 8 phases operating 1 to 2
loops. These digital controllers can be used in...
|IR's Robust 100V FastIRFET PQFN 5x6 Power MOSFET Delivers Benchmark Performance for Telecom Power Supply Applications|
March 06, 2014
The IRFH7185TRPbF utilizes IR's new 100V FastIRFET process to offer
benchmark Rds(on)*Qg figure of merit to deliver higher efficiency and
increased power density as well as enhanced syst...
|IR to Showcase Latest Energy Saving Power Management Solutions at Electronica China 2014|
March 04, 2014
Engineering and sales staff will demonstrate IR's latest energy saving
and high power density enabling technologies and products at Booth 1102,
Hall W1. In addition, IR will participate ...
|GaN Systems Appoints Charles Bailley as Senior Director of Technical Marketing, Asia|
March 03, 2014
Bailley is a well-respected and experienced figure in the power
semiconductor industry, with over eighteen years' engineering and
management experience in semiconductors and platforms at...
|IR Introduces a Rugged, Reliable Ultra-fast 1400V IGBT Optimized for Induction Heating and Soft Switching Applications|
February 27, 2014
Co-packaged with an ultra-low forward voltage diode, the IRG7PK35UD1PbF
utilizes IR's Gen7 thin-wafer trench technology to deliver extremely low
VCE(ON) and ultra-fast switching to offer...
|UBM Tech's EE Times and EDN Announce the Finalists for 2014 ACE Awards|
February 25, 2014
SAN FRANCISCO, Feb. 25, 2014 /PRNewswire/ UBM Tech, which connects the electronics engineering community with essential business and technical insight, today announced the finalists for the 2014 ACE (...
|International Rectifier Opens State-of-the-Art Ultra-Thin Wafer Processing Facility in Singapore|
February 24, 2014
Wafer thinning, metallization, testing and additional proprietary wafer
level processing are undertaken at the new 60,000 square foot
manufacturing site which receives processed wafers f...
|International Rectifier to Present Latest Power Management Solutions at APEC 2014|
February 20, 2014
IR engineering and sales staff will demonstrate IR's latest
energy-savings and high power density enabling technologies and products
at Booth 101. In addition, IR's power management expe...